Ezanalog

Description

MPD8021 Specifications MPD8021 Technical Bulletin PDF file size 509K -EZAnalog Package Information PDF file size 145K Overview The MPD8021 is a semicustom, high-voltage, mixed-mode, power ASIC (Application Specific Integrated Circuit) suitable for quick R&D, proof-of-concept and production of analog ICs. Clients can begin designing proprietary ASICs using a low-cost SPICE simulator and the free MPD8021 Design Kit--available through local representatives. Click here for a list of representatives. Rapid Turnaround Micrel delivers rapid turnaround by applying a unique metal interconnect pattern, based on the clients design, to a stock MPD8021 wafer. To facilitate a rapid and low-cost design approach, Micrel offers MPD8021 development programs that range from limited assistance to full turnkey. When you are ready for production, you can count on Micrels proven fab and test group to provide timely deliveries of high-quality, fully-tested, proprietary ICs. Development There is no cost or obligation to begin developing your own MPD8021-based custom IC. Kit parts which are actual working designs, featuring access to many internal functions are available free of charge through local representatives for breadboarding circuits. ESD ADVISORY Technology The MPD8021 features bipolar/CMOS/DMOS high voltage technology and is fabricated using Micrels proprietary BCD5 process to combine high-speed, low-voltage digital and analog circuits with high-voltage DMOS power drive circuits on a single chip. All logic and analog circuitry is powered from a single +3V to +12V supply. The high-voltage portion functions at voltages from +5V to over +100V and includes a charge pump capable of driving the gate of an N-channel MOSFET 12V greater than the high-voltage supply in high-side switching applications. Features -40 high-voltage PMOS FETs (for level shifting, high-voltage amplifiers) -12 high-voltage, 200 ohm, DMOS FETs (for level shifting, voltage amplifiers) -20 high-voltage, grounded-source, DMOS FETs (for level shifting, current mirrors) ->100 uncommitted CMOS gates -12 CMOS/TTL I/O buffers -13 low-voltage CMOS tile arrays (for op amps, comparators, digital circuitry) -14 dual-collector PNPs and 14 NPNs (for trimmed bandgaps, low-offset amplifiers or comparators, temperature sensor) -High and low-value resistors and capacitors (>1M ohm combined resistance, 45pF combined capacitance) -12V and 6V zener diodes (gate to source clamps, voltage references) -67 I/O pads (36 include 2kV ESD protection) -Guaranteed -55

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