Qspec Technology Inc

Website Links

Description

Welcome to QSpec Technology. Your Choice for SIMS analysis. Welcome to QSpec Technology Incorporated, the dedicated SIMS analytical service laboratory. With a highly experienced team and state-of-the-art instrumentation, we can assist you in enhancing yield and device performance and reduce R&D cycle time. Go ahead. Give us a call. See what we can do for you. Applying dopant impurity is the common method for changing the original properties of materials in order to obtain certain transport characteristics. Precise location of p-n junctions and doping levels improve the consistency of device performances. Intentional and unintentional dopant/impurity profiles can be monitored for virtually every element of the periodic table by SIMS. The high sensitivity of the SIMS technique allows monitoring impurity concentration levels down to the ppm-ppb range. In device processing for microelectronics, structures are grown by different epitaxial techniques (MBE, MOCVD, LPE). After growth annealing steps are necessary, in which case diffusion plays an important role. Cu is a known fast diffuser in most materials, and will diffuse even more quickly along polycrystalline crystal boundaries. SIMS can be used to assess variations in Cu concentration and distribution after annealing. SIMS is a key metrology tool for matching recipes and performance of ion implant tools. By using rigorous analytical protocols, SIMS can qualify ion implanter performance with an accuracy better than 1% for total dose, peak concentration, and projected range.

Fact sheet

Products & services

Similar companies nearby